STABILITY STUDIES ON AUCL3-DOPED POLY(3-HEXYLTHIOPHENE) - COMPARISON WITH FECL3 DOPING

被引：9

作者：

AHLSKOG, M

机构：

[1] VTT Electronics, Electronic Materials and Components, Otakaari 7B, Post Box 1101

来源：

SYNTHETIC METALS | 1995年 / 72卷 / 02期

关键词：

STABILITY; DOPING; POLY(3-HEXYLTHIOPHENE); GOLD; IRON;

D O I：

10.1016/0379-6779(94)02328-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stability of AuCl3-doped poly(3-hexylthiophene) thin films was studied at elevated temperatures by means of optical spectroscopy. At room temperature the stability is substantially enhanced relative to that of the FeCl3-doped system. At elevated temperatures even AuCl3 is a thermally unstable dopant, although still more stable than FeCl3.

引用

页码：197 / 200

页数：4

共 18 条

[1]

ABDOU MSA, 1993, SYNTHETIC MET, V60, P93

[2] PHOTOCHEMISTRY OF ELECTRONICALLY CONDUCTING POLY(3-ALKYLTHIOPHENES) CONTAINING FECL4- COUNTERIONS [J].