BUTT-JOINTED DBR LASER WITH 15NM TUNABILITY GROWN IN 3 MOVPE STEPS

被引：32

作者：

DELORME, F

SLEMPKES, S

ALIBERT, G

ROSE, B

BRANDON, J

机构：

[1] France Telecom-CNET/PAB, 92225 Bagneux Cedex, 196, Avenue H. Ravera

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

INDIUM PHOSPHIDE; LASER TUNING; DISTRIBUTED BRAGG REFLECTOR LASERS; VAPOR PHASE EPITAXIAL GROWTH;

D O I：

10.1049/el:19950888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP/InP butt-jointed. buried ridge DBR lasers, exhibiting a record 15 nm tuning range, have been realised using only a three-step MOVPE process. The highest number (38) ever reported of regularly spaced wavelength channels is obtained from a two-section DBR laser, in which the passive waveguide was optimised in terms of carrier-induced effective index change and active-passive coupling efficiency.

引用

页码：1244 / 1245

页数：2

共 7 条

[1] ULTRA-FAST OPTICAL SWITCHING OPERATION OF DBR LASERS USING AN ELECTROOPTICAL TUNING SECTION [J].