ELECTRON-BOMBARDMENT INDUCED DEFECT STATES IN P-INP

被引:16
作者
LEVINSON, M
TEMKIN, H
BONNER, WA
机构
关键词
D O I
10.1007/BF02651141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:423 / 432
页数:10
相关论文
共 19 条
[1]   MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J].
BAUERLEIN, R .
ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :498-&
[2]   MESSUNG DER ENERGIE ZUR BILDUNG EINES GITTER-DEFEKTES IN VERSCHIEDENEN AIIIBV-VERBINDUNGEN DURCH ELEKTRONENBESTRAHLUNG [J].
BAUERLEIN, R .
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1959, 14 (12) :1069-1071
[3]  
BAUERLEIN R, 1965, SIEMENS Z, V39, P442
[4]  
CHOUDHURY ANM, 1979, IOP C P, V45, P211
[5]  
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[6]   EFFECT OF HEAT-TREATMENT ON N-TYPE BULK GROWN AND VAPOR-PHASE EPITAXIAL INDIUM-PHOSPHIDE [J].
GUHA, S ;
HASEGAWA, F .
SOLID-STATE ELECTRONICS, 1977, 20 (01) :27-28
[7]   OXYGEN-RELATED DONOR STATES IN SILICON [J].
KIMERLING, LC ;
BENTON, JL .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412
[8]   DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].
LEVINSON, M ;
BENTON, JL ;
TEMKIN, H ;
KIMERLING, LC .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992
[9]  
LEVINSON M, UNPUB
[10]   ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS [J].
MARTIN, PA ;
STREETMAN, BG ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7409-7415