PERTURBATION ANALYSIS OF RECTANGULAR WAVEGUIDE CONTAINING TRANSVERSELY MAGNETIZED SEMICONDUCTOR

被引：10

作者：

GABRIEL, GJ

BRODWIN, ME

机构：

来源：

关键词：

D O I：

10.1109/TMTT.1966.1126248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：258 / &

共 10 条

BRESLER, AD ;

JOSHI, GH ;

MARCUVITZ, N .

[2]

BURGESS T, 1965, THESIS NORTHWESTERN

[3]

COLLIN RE, 1960, FIELD THEORY GUIDED, P170

[4] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM [J].

FURDYNA, JK ;

BROERSMA, S .

PHYSICAL REVIEW, 1960, 120 (06) :1995-2003

[5]

GABRIEL GJ, 1965, IEEE MICR T, VMT13, P364

[6]

GABRIEL GJ, 1966, IEEE T, VMT14, P292

[7]

GABRIEL GJ, 1964, THESIS NORTHWESTERN

[8]

LAX B, 1955, PHYS REV, V98, P548, DOI 10.1103/PhysRev.98.548.2

[9]

LAX B, 1962, MICROWAVE FERRITES F, P355

[10]

VARTANIAN PH, 1956, IRE T MICROWAVE THEO, VMTT4, P140