ELECTRONIC-PROPERTIES AND STRUCTURE OF AMORPHOUS INP

被引：11

作者：

GHEORGHIU, A ^{[1
]}

OUCHENE, M ^{[1
]}

RAPPENEAU, T ^{[1
]}

THEYE, ML ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS,CHIM PHYS LAB 176,F-75230 PARIS 05,FRANCE

来源：

关键词：

D O I：

10.1016/0022-3093(83)90660-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：621 / 624

页数：4

共 24 条

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[10] EFFECTS OF DISORDER ON ELECTRONIC DENSITY OF STATES OF III-V COMPOUNDS
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