ANOMALOUS INDUCTIVE EFFECT IN SELENIUM SCHOTTKY DIODES

被引：83

作者：

CHAMPNESS, CH

CLARK, WR

机构：

[1] Electrical Engineering Department, McGill University, Montreal H3A 2A7

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A region of anomalous negative capacitance has been observed with forward bias in Se-Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the impedance that is believed to arise from high-level injection of minority electrons into the bulk selenium.

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页码：1104 / 1106

页数：3

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