EFFECT OF GROWTH-PARAMETERS ON THE INTERFACIAL STRUCTURE OF GAINAS/INP QUANTUM-WELLS

被引：42

作者：

HERGETH, J

GRUTZMACHER, D

REINHARDT, F

BALK, P

机构：

[1] Institute of Semiconductor Electronics, Technical University Aachen

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90517-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the growth of GaInAs/InP multiple quantum well (MQW) structures by low pressure MOVPE using TMI, TMG, AsH3 and PH3 as precursors. Using 2 K photoluminescence as a tool the effects of gas switching sequences, deposition temperature and growth rate were explored. The data permit identification of surface processes during growth interruption and establishment of the mode of growth. It was confirmed that deposition conditions leading to attractive material properties and optimum control lead to two-dimensional growth yielding atomically flat interfaces.

引用

页码：537 / 542

页数：6

共 10 条

[1]

ANDRE JP, 1987, I PHYS C SER, V83, P417

[2] MODE OF GROWTH IN LP-MOVPE DEPOSITION OF GAINAS INP QUANTUM-WELLS [J].