INERT-GAS REACTIVE ION ETCHING DAMAGE TO GAAS USING INVERTED HETEROJUNCTIONS

被引：14

作者：

KNOEDLER, CM

OSTERLING, L

HEIBLUM, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1800 / 1802

页数：3

共 12 条

[1]

EPHRATH LM, 1981, SOLID STATE TECHNOL, V24, P182

[2] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].

HEIBLUM, M ;

THOMAS, DC ;

KNOEDLER, CM ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107

[3] SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2 [J].

KNOEDLER, CM ;

KUECH, TF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1233-1236

[4]

KNOEDLER CM, 1988, J VAC SCI TECHNOL B, V6, P1753

[5] EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GAAS [J].

PANG, SW ;

GEIS, MW ;

EFREMOW, NN ;

LINCOLN, GA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :398-401

[6] SURFACE DAMAGE ON GAAS INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING [J].

PANG, SW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :784-787

[7] EFFECTS OF DRY ETCHING ON GAAS [J].

PANG, SW ;

LINCOLN, GA ;

MCCLELLAND, RW ;

DEGRAFF, PD ;

GEIS, MW ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1334-1337

[8] ULTRANARROW CONDUCTING CHANNELS DEFINED IN GAAS-ALGAAS BY LOW-ENERGY ION DAMAGE [J].

SCHERER, A ;

ROUKES, ML ;

CRAIGHEAD, HG ;

RUTHEN, RM ;

BEEBE, ED ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2133-2135

[9] HIGH-MOBILITY INVERTED SELECTIVELY DOPED HETEROJUNCTIONS [J].

SHTRIKMAN, H ;

HEIBLUM, M ;

SEO, K ;

GALBI, DE ;

OSTERLING, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :670-673

[10]

Van der Pauw L.J., 1958, PHILIPS RES REP, V13, P1

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