POWER AND EFFICIENCY LIMITS IN SINGLE-MIRROR LIGHT-EMITTING-DIODES WITH ENHANCED INTENSITY

被引：14

作者：

HUNT, NEJ

SCHUBERT, EF

SIVCO, DL

CHO, AY

ZYDZIK, GJ

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 23期

关键词：

LIGHT EMITTING DIODES;

D O I：

10.1049/el:19921392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The principle of enhanced emission intensity in a single-mirror light emitting diode (LED) is demonstrated by placing an InGaAs multiquantum-well active region in the antinode of the optical mode created by a nearby metallic mirror, thus enhancing emission along the optical axis by up to four times. Multiple-well LED structures exhibit enhanced efficiencies similar to that of a perfect isotropic emitter. The emission intensity of single-well LEDs is limited by band filling.

引用

页码：2169 / 2171

页数：3

共 4 条

[1]

DEPPE DG, 1990, ELECTRON LETT, V27, P1165

[2] GAAS/GAALAS SURFACE EMITTING IR LED WITH BRAGG REFLECTOR GROWN BY MOCVD [J].