EFFECT OF FINAL ANNEALING ON HOT-ELECTRON-INDUCED MOSFET DEGRADATION

被引：23

作者：

HSU, FC

HUI, J

CHIU, KY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 371

页数：3

共 8 条

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FAIR, RB ;

SUN, RC .

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[2] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J].

HSU, FC ;

GRINOLDS, HR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :71-74

[3]

Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[4] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[5]

LEVY RA, 1985, J ELECTROCHEM SOC, V132, P159, DOI 10.1149/1.2113753

[6]

Ogura S., 1982, International Electron Devices Meeting. Technical Digest, P718

[7] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J].

TAKEDA, E ;

KUME, H ;

TOYABE, T ;

ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :611-618

[8]

Toyoshima Y., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P786

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