OBSERVATION OF FINE ONE-DIMENSIONALLY-DISORDERED LAYERS IN SILICON-CARBIDE

被引：8

作者：

BARNES, P ^{[1
]}

KELLY, JF ^{[1
]}

FISHER, GR ^{[1
]}

机构：

[1] MEMC ELECTR MAT,I-28100 NOVARA,ITALY

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 64卷 / 01期

关键词：

D O I：

10.1080/09500839108214660

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The improved resolution of synchrotron edge-topography is enabling thinner, < 100-mu-m, silicon carbide crystals to be studied, and is providing a more detailed and wider database on polytype depth profiles. Fine long-period and one-dimensionally-disordered layers, 5 to 25-mu-m thick, can now be confidently resolved and are found to be very common features, often in association with high-defect-density bands. These features are illustrated in this paper using three examples.

引用

页码：7 / 13

页数：7

共 6 条

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