COMPUTER-SIMULATION OF III-V MESFETS MODFETS AND MIS-LIKE FETS

Accurate modeling of III-V submicron FETs requires that new physical phenomena occurring in these devices be considered if we want to describe the behavior of such devices and simulate them. The presently available models can roughly be sorted into three classes: the particle or Monte Carlo models, the two-dimensional solving of semiconductor equations, and the one-dimensional or analytical models. These different types of models are presented and their main capabilities and range of applicability are compared and discussed. Some applications to simulate MESFET's, MODFET's or MIS-like FET's are also presented.