DEVELOPMENT OF A LABORATORY EXAFS FACILITY AND ITS APPLICATION TO AMORPHOUS GESE SEMICONDUCTORS

被引：37

作者：

MAEDA, H

TERAUCHI, H

TANABE, K

KAMIJO, N

HIDA, M

KAWAMURA, H

机构：

[1] KWANSEI GAKUIN UNIV, DEPT PHYS, NISHINOMIYA, HYOGO 662, JAPAN

[2] GOVT IND RES INST, IKEDA, OSAKA 563, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.1342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1342 / 1346

页数：5

共 23 条

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