LATTICE-DEFECTS IN LPE INP-INGAASP-INGAAS STRUCTURE EPITAXIAL LAYERS ON INP SUBSTRATES

被引：13

作者：

ISHIDA, K ^{[1
]}

MATSUMOTO, Y ^{[1
]}

TAGUCHI, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, OPTO ELECTR RES LAB, KAWASAKI 213, JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1002/pssa.2210700133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：277 / 286

页数：10

共 16 条

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[4]

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[6]

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[8]

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[9]

MATSUMOTO Y, UNPUB

[10] LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP [J].

NAKAJIMA, K ;

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