PHOTOTRANSIENTS IN 30-MOL-PERCENT CDO-70 MOL-PERCENT P2O5 GLASS

被引：7

作者：

NAZAR, FM

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1080/00207218308938735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 373

页数：5

共 14 条

[1] BAND-GAP VARIATION WITH COMPOSITION IN CADMIUM PHOSPHATE-GLASSES [J].

GHAURI, MA ;

BOKHARI, WH ;

NAZAR, FM .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 51 (03) :201-204

[2]

GHAURI MA, 1981, J NONCRYSTALLINE SOL, V46, P434

[3]

MOTT NF, 1970, ELECTRONIC PROCESSES

[4] HIGH-FIELD TRANSIENT-BEHAVIOR OF THIN RF SPUTTERED AL-AL2O3-AL FILMS [J].

NATHOO, V ;

MASON, PR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (16) :L351-L356

[5] TRANSIENT CURRENTS IN THIN RF SPUTTERED AL2O3 FILMS [J].

NATHOO, V ;

MASON, PR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (21) :4335-4345

[6] ELECTRICAL-PROPERTIES OF ANODIC ALUMINUM-OXIDE FILMS [J].

NAZAR, FM ;

AHMAD, N .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (01) :81-87

[7] PHOTOTRANSIENTS OBSERVED IN ALUMINUM-SILICON NITRIDE-SILICON STRUCTURES [J].

NAZAR, FM .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (03) :265-271

[8] SURFACE-ENERGY BANDS IN SILICON-NITRIDE PASSIVATED P-SI UNDER STEP FUNCTION ILLUMINATION [J].

NAZAR, FM .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :373-374

[9] FIELD-DEPENDENCE OF THE OPTICAL BAND-GAP IN CDO-P2O5 GLASS [J].

NAZAR, FM ;

GHAURI, MA ;

BOKHARI, WH .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 50 (03) :193-198

[10]

SAH CT, 1974, IEEE T ELECTRON DEV, VED21, P202

← 1 2 →