UNIDIRECTIONAL ANISOTROPY IN EXCHANGE-COUPLED NIFE/FEMN SYSTEM FOR THIN NIFE FILMS

被引：18

作者：

KIM, YK

HA, K

REA, LL

机构：

[1] Quantum Peripherals Colorado, Inc., Louisville

[2] Massachusetts Institute of Technology, Cambridge

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1995年 / 31卷 / 06期

关键词：

D O I：

10.1109/20.489784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The unidirectional exchange anisotropy field H-ex was investigated in NiFe/FeMn films. It was found that the H-ex is proportional to t(NiFe)(-1.2) for 30 Angstrom less than or equal to t(NiFe) less than or equal to 400 Angstrom where t(NiFe) is the NiFe film thickness. For t(NiFe) = 30 Angstrom, H-ex was measured to be 800 Oe in some samples. NiFe/FeMn structures on alumina underlayers were also studied; their presence reduces the strength of the anisotropy significantly.

引用

页码：3823 / 3825

页数：3

共 11 条

[1] EFFECT OF SUBSTRATE AND ANTIFERROMAGNETIC FILMS THICKNESS ON EXCHANGE-BIAS FIELD (INVITED) [J].