REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT

被引:22
作者
NORSTROM, H [1 ]
RUNOVC, F [1 ]
BUCHTA, R [1 ]
WIKLUND, P [1 ]
OSTLING, M [1 ]
PETERSSON, CS [1 ]
机构
[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期
关键词
D O I
10.1116/1.571948
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:463 / 464
页数:2
相关论文
共 5 条
  • [1] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE
    JAHNEL, F
    BIERSACK, J
    CROWDER, BL
    DHEURLE, FM
    FINK, D
    ISAAC, RD
    LUCCHESE, CJ
    PETERSSON, CS
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378
  • [2] MURARKA SP, 1980, J VAC SCI TECHNOL, V17, P755
  • [3] OSTLING M, 1982, 12TH P EUR SOL STAT
  • [4] PETERSSON CS, UNPUB PHYS SCR
  • [5] TITANIUM DISILICIDE IN MOS TECHNOLOGY
    RUNOVC, F
    NORSTROM, H
    BUCHTA, R
    WIKLUND, P
    PETERSSON, S
    [J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112