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REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT
被引:22
作者
:
NORSTROM, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
NORSTROM, H
[
1
]
RUNOVC, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
RUNOVC, F
[
1
]
BUCHTA, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
BUCHTA, R
[
1
]
WIKLUND, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
WIKLUND, P
[
1
]
OSTLING, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
OSTLING, M
[
1
]
PETERSSON, CS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
PETERSSON, CS
[
1
]
机构
:
[1]
UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
|
1983年
/ 1卷
/ 02期
关键词
:
D O I
:
10.1116/1.571948
中图分类号
:
TB3 [工程材料学];
学科分类号
:
0805 ;
080502 ;
摘要
:
引用
收藏
页码:463 / 464
页数:2
相关论文
共 5 条
[1]
THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE
JAHNEL, F
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JAHNEL, F
BIERSACK, J
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BIERSACK, J
CROWDER, BL
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DHEURLE, FM
FINK, D
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h-index:
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FINK, D
ISAAC, RD
论文数:
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引用数:
0
h-index:
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ISAAC, RD
LUCCHESE, CJ
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引用数:
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h-index:
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUCCHESE, CJ
PETERSSON, CS
论文数:
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引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
PETERSSON, CS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(11)
: 7372
-
7378
[2]
MURARKA SP, 1980, J VAC SCI TECHNOL, V17, P755
[3]
OSTLING M, 1982, 12TH P EUR SOL STAT
[4]
PETERSSON CS, UNPUB PHYS SCR
[5]
TITANIUM DISILICIDE IN MOS TECHNOLOGY
RUNOVC, F
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
RUNOVC, F
NORSTROM, H
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
NORSTROM, H
BUCHTA, R
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
BUCHTA, R
WIKLUND, P
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
WIKLUND, P
PETERSSON, S
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
PETERSSON, S
[J].
PHYSICA SCRIPTA,
1982,
26
(02):
: 108
-
112
←
1
→
共 5 条
[1]
THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE
JAHNEL, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JAHNEL, F
BIERSACK, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BIERSACK, J
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CROWDER, BL
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DHEURLE, FM
FINK, D
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FINK, D
ISAAC, RD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ISAAC, RD
LUCCHESE, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUCCHESE, CJ
PETERSSON, CS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
PETERSSON, CS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(11)
: 7372
-
7378
[2]
MURARKA SP, 1980, J VAC SCI TECHNOL, V17, P755
[3]
OSTLING M, 1982, 12TH P EUR SOL STAT
[4]
PETERSSON CS, UNPUB PHYS SCR
[5]
TITANIUM DISILICIDE IN MOS TECHNOLOGY
RUNOVC, F
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
RUNOVC, F
NORSTROM, H
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
NORSTROM, H
BUCHTA, R
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
BUCHTA, R
WIKLUND, P
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
WIKLUND, P
PETERSSON, S
论文数:
0
引用数:
0
h-index:
0
机构:
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
PETERSSON, S
[J].
PHYSICA SCRIPTA,
1982,
26
(02):
: 108
-
112
←
1
→