GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE

被引：56

作者：

JASTRZEBSKI, L

CORBOY, JF

MCGINN, JT

PAGLIARO, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 07期

关键词：

D O I：

10.1149/1.2120037

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1571 / 1580

页数：10

共 32 条

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[8]

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[10]

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