INTERACTION BETWEEN BORON AND INTRINSIC DEFECTS IN GAAS

被引：24

作者：

ELLIOTT, KR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3856 / 3858

页数：3

相关论文

共 11 条

[1] ASBECK PM, 1980, ELECTRON DEVIC LETT, V1, P35
[2] ELLIOTT KAC, UNPUB
[3] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS
ELLIOTT, KR
HOLMES, DE
CHEN, RT
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 898 - 901
[4] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS
ELLIOTT, KR
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 274 - 276
[5] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
ELLIOTT, KR
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48
[6] HOLMES DE, 1982, 2ND P C SEM 3 5 MAT
[7] HUGHES B, 1982, P INT S GAAS RELATED
[8] EVIDENCE OF THE ROLE OF BORON IN UNDOPED GAAS GROWN BY LIQUID ENCAPSULATED CZOCHRALSKI
TA, LB
HOBGOOD, HM
THOMAS, RN
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1091 - 1093
[9] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS
VANVECHTEN, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429
[10] IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS
WEBER, ER
ENNEN, H
KAUFMANN, U
WINDSCHEIF, J
SCHNEIDER, J
WOSINSKI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6140 - 6143