QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS

被引：49

作者：

HOMMA, Y ^{[1
]}

ISHII, Y ^{[1
]}

KOBAYASHI, T ^{[1
]}

OSAKA, J ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2931 / 2935

页数：5

共 12 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[2]

GAUNEAU M, 1982, 3RD P INT C SEC ION, V3, P342

[3]

Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045

[4] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[5]

HOMMA Y, UNPUB J VAC SCI TE A

[6] CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HUNTER, AT ;

KIMURA, H ;

BAUKUS, JP ;

WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :74-76

[7]

KOBAYASHI T, UNPUB J CRYST GROWTH

[8]

KUROSAWA S, 1984, 4TH P INT C SEC ION, V4, P107

[9] ION-IMPLANTATION FOR INSITU QUANTITATIVE ION MICROPROBE ANALYSIS [J].

LETA, DP ;

MORRISON, GH .

ANALYTICAL CHEMISTRY, 1980, 52 (02) :277-280

[10] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J].

TA, LB ;

HOBGOOD, HM ;

ROHATGI, A ;

THOMAS, RN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5771-5775

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