NEW RESISTIVITY FOR HIGH-MOBILITY QUANTUM HALL CONDUCTORS

被引：224

作者：

MCEUEN, PL ^{[1
]}

SZAFER, A ^{[1
]}

RICHTER, CA ^{[1
]}

ALPHENAAR, BW ^{[1
]}

JAIN, JK ^{[1
]}

STONE, AD ^{[1
]}

WHEELER, RG ^{[1
]}

SACKS, RN ^{[1
]}

机构：

[1] UNITED TECHNOL RES CTR,E HARTFORD,CT 06108

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.64.2062

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present measurements showing dramatic nonlocal behavior in the four-terminal resistances of a high-mobility quantum Hall conductor. These measurements illustrate that the standard definition of the resistivity tensor is inappropriate, but they are in excellent agreement with a new model of the conductor that treats the edge and bulk conducting pathways independently. This model uses a single intensive parameter, analogous to a local resistivity for the bulk channel only, to characterize the system. © 1990 The American Physical Society.

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页码：2062 / 2065

页数：4

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