ELECTRIC-FIELD AND INFRARED-INDUCED RECOVERY OF METASTABILITY IN AMORPHOUS HYDROGENATED SILICON

被引:3
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BHATTACHARYA, E
PANKOVE, JI
DEB, SK
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10.1063/1.98788
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O59 [应用物理学];
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页码:998 / 1000
页数:3
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共 13 条
[1]  
ADLER D, 1981, J PHYS-PARIS, V4, P3
[2]  
CRANDALL RS, 1985, TETRAHEDRALLY BONDED, P315
[3]  
DELAHOY AE, 1987, AIP C P, V157, P263
[4]   LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458
[5]  
FATHALLAH M, 1986, MAR APS M LAS VEG
[6]  
NAKAMURA N, 1984, AIP C P, V120, P303
[7]   LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].
PANKOVE, JI ;
BERKEYHEISER, JE .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706
[8]  
PANKOVE JI, 1987, AIP C P, V157, P294
[9]   LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].
STUTZMANN, M ;
JACKSON, WB ;
TSAI, CC .
PHYSICAL REVIEW B, 1985, 32 (01) :23-47
[10]  
STUTZMANN M, 1987, AIP C P, V157, P235