1.5-MU-M GAINASP-INP DISTRIBUTED REFLECTOR (DR) LASER WITH HIGH-LOW REFLECTION GRATING STRUCTURE

被引：4

作者：

AOKI, M

KOMORI, K

MIYAMOTO, Y

ARAI, S

SUEMATSU, Y

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 24期

关键词：

D O I：

10.1049/el:19891106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1650 / 1651

页数：2

共 10 条

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JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :365-369

[2] HIGHLY EFFICIENT 1.5 MU-M DFB-PPIBH LASER DIODE WITH VERY NARROW BEAM [J].

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YOSHIDA, N ;

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KAWAMA, Y ;

NAKAJIMA, Y ;

SAKAKIBARA, Y .

ELECTRONICS LETTERS, 1988, 24 (24) :1500-1501

[3]

KITAMURA M, 1985, IOOC 85 ECOC 85

[4]

KOMORI K, 1989, IN PRESS IEEE J QUAN

[5]

KOMORI K, 1988, T IEIECJ E, V71, P435

[6] NOVEL SINGLE-LONGITUDINAL-MODE 1.5-MU-M GAINASP INP DISTRIBUTED REFLECTOR (DR) LASER [J].

PELLEGRINO, S ;

KOMORI, K ;

SUZUKI, H ;

LEE, KS ;

ARAI, S ;

SUEMATSU, Y ;

AOKI, M .

ELECTRONICS LETTERS, 1988, 24 (07) :435-437

[7]

SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161

[8]

Tohmori Y., 1987, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE70, P494

[9]

TOHORI Y, 1988, JPN J APPL PHYS, V27, pL693

[10] SUFFICIENTLY SIDE-MODE-SUPPRESSED HIGH-OUTPUT-POWER 1.5 MU-M DFB LASERS [J].

YOSHIDA, J ;

ITAYA, Y ;

NOGUCHI, Y ;

MATSUOKA, T ;

NAKANO, Y .

ELECTRONICS LETTERS, 1986, 22 (06) :327-328

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