NI IMPURITY EFFECTS ON HYDROGEN SURFACE-CHEMISTRY AND ETCHING OF SI(111)

被引：19

作者：

WALLACE, RM ^{[1
]}

CHENG, CC ^{[1
]}

TAYLOR, PA ^{[1
]}

CHOYKE, WJ ^{[1
]}

YATES, JT ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

来源：

APPLIED SURFACE SCIENCE | 1990年 / 45卷 / 03期

关键词：

D O I：

10.1016/0169-4332(90)90003-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of impurity Ni on the etching of Si by hydrogen chemisorption is examined in ultra-high vacuum with Auger electron spectroscopy and temperature-programmed desorption methods. It is found that a small surface concentration of Ni (≤ 5%) inhibits the production of SiH4 from atomic H adsorption on the Si(111)-Ni surface. © 1990.

引用

页码：201 / 206

页数：6