HETEROSTRUCTURE BIPOLAR-TRANSISTORS BASED ON INP AND APPLICATION TO INTEGRATED-CIRCUITS FOR LIGHTWAVE COMMUNICATION

被引：1

作者：

NOTTENBURG, RN

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90234-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives an overview of the properties of high speed Al0.48In0.52As/In0.53Ga0.47As and InP/In0.53Ga0.47 As heterostructure bipolar transistors (HBTs). Examples of the application of these transistors in integrated circuits relevant for lightwave communication systems are shown.

引用

页码：303 / 312

页数：10

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