THE ROLE OF MICROSTRUCTURE IN THE ELECTRICAL-PROPERTIES OF GAAS GROWN AT LOW-TEMPERATURE

被引：15

作者：

IBBETSON, JP ^{[1
]}

SPECK, JS ^{[1
]}

NGUYEN, NX ^{[1
]}

GOSSARD, AC ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

HIGH FIELD; PRECIPITATES; TRANSPORT; TUNNELING EMISSION;

D O I：

10.1007/BF02649990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have examined the role of As precipitates on transport through undoped GaAs grown at low temperature by molecular beam epitaxy and annealed at high temperature. Temperature dependent I-V measurements exhibit two regimes. At temperatures less than similar to 200K, transport attributed to point defect-associated hopping conduction is observed even for samples annealed at 750 degrees C. For temperatures greater than similar to 200K, the transport is quantitatively consistent with calculations of thermally assisted tunneling emission of electrons from metallic As precipitates acting as buried Schottky barriers.

引用

页码：1421 / 1424

页数：4

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