INJECTION LUMINESCENCE IN OXYGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

AKIMOTO, K

MIYAJIMA, T

MORI, Y

机构：

[1] Sony Corporation Research Center, Yokohama, 240, Fujitsuka 174, Hodogaya

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91123-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical properties of oxygen-doped ZnSe grown by molecular-beam epitaxy were studied by means of photoluminescence spectroscopy. It was found that oxygen, an isoelectronic impurity in ZnSe, can act as an acceptor with an activation energy of about 80 meV. Blue electroluminescence has been obtained from ZnSe p-n junctions. The dopants used for n- and p-type ZnSe were Ga and O, respectively. The results of the electron beam induced current strongly suggests the formation of a p-n junction. The electroluminescence spectra from the p-n junction were dominated by band-edge emission of 4660 Å at room temperature and 4460 Å at 77 K. © 1989.

引用

页码：1009 / 1012

页数：4

共 7 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY [J].