CHARACTERIZATION OF MOLECULAR-BEAM DEPOSITED CUINSE2 THIN-FILMS

We have prepared copper-rich, near-stoichiometric and indium-rich CuInSe2 thin films by using a molecular beam deposition method. The composition of the films was homogeneously distributed. The copper-rich films exhibited low resistivity and p-type conduction. The near-stoichiometric films exhibited intermediate resistivity and n-type conduction. The indium-rich films exhibited high resistivity and n-type conduction. Both the grain size and the relative intensity of the (112) X-ray reflection was larger for the film having larger Cu:In ratio, Kikuchi lines were observed in the electron diffraction pattern within a grain of the copper-rich film. No additional second phase except the copper precipitate at a triple point of the grain boundaries for the copper-rich film was detected.