ATOMIC STEP RESOLUTION IN SCANNING TUNNELING MICROSCOPE IMAGING OF H2SO4 COVERED SI(100) SURFACES

被引：22

作者：

HOUBERTZ, R

MEMMERT, U

BEHM, RJ

机构：

[1] Institut für Kristallographie und Mineralogie, Universität München, D-8000 München 2

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 10期

关键词：

D O I：

10.1063/1.104413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stable, high-resolution scanning tunneling microscopy imaging of Si surfaces in an electrochemical environment, under potentiostatic control, is demonstrated. Atomic scale structures such as monoatomic steps are resolved on H2SO4 covered Si(100) surfaces. In this environment, contamination and reoxidation are quantitatively inhibited, making this method applicable for imaging of technical Si surfaces.

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页码：1027 / 1029

页数：3

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