GRAPHITE THIN-FILM FORMATION BY CHEMICAL-VAPOR-DEPOSITION

被引：42

作者：

YUDASAKA, M ^{[1
]}

KIKUCHI, R ^{[1
]}

MATSUI, T ^{[1
]}

KAMO, H ^{[1
]}

OHKI, Y ^{[1
]}

YOSHIMURA, S ^{[1
]}

OTA, E ^{[1
]}

机构：

[1] GUNMA UNIV,FAC ENGN,DEPT CHEM,KIRYU,GUNMA 376,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.110998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-ordered graphite thin films were obtained by chemical vapor deposition of 2-methyl-1, 2'-naphthyl ketone on Ni substrates at substrate temperatures higher than 600 degrees C. Values of interlayer spacing calculated from x-ray diffraction data were between 3.360 and 3.350 Angstrom. Raman scattering spectra of the films showed a peak centering at 1580 cm(-1).

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页码：842 / 844

页数：3

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