THERMAL-STABILITY OF ALINAS/GAINAS/INP HETEROSTRUCTURES

被引：49

作者：

HAYAFUJI, N

YAMAMOTO, Y

YOSHIDA, N

SONODA, T

TAKAMIYA, S

MITSUI, S

机构：

[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664, 4-1, Mizuhara

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.113412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of the thermal instability of the AlInAs/GaInAs system is identified and a novel method to recover the thermal degradation is also demonstrated. The thermal diffusion of fluorine into the Si-doped AlInAs layer is found to be the main cause of the electrical deterioration of this system. This finding has led to a method to recover the thermal degradation by purging the fluorine off using the reannealing in the ultrahigh-vacuum condition. This method is now potentially becoming a good candidate as a tip for the AlInAs/GaInAs devices fabrication including laser diode and high electron mobility transistor.© 1995 American Institute of Physics.

引用

页码：863 / 865

页数：3