共 24 条
[1]
See Mooney PM, J. Appl. Phys., 67, 3, (1990)
[2]
Fujisawa T, Yoshino J, Kukimoto H, (1990)
[3]
Mooney PM, Theis TN, Wright SL, (1990)
[4]
Mooney PM, Theis TN, Wright SL, Appl. Phys. Lett., 53, 24, (1990)
[5]
Baba T, Mizuta M, Fujisawa T, Yoshino J, Kukimoto, Japan. J. Appl. Phys., 28, (1989)
[6]
Chadi JD, Chang K, Phys. Rev. Lett., 61, 7, (1988)
[7]
Morgan TN, The Vacancy-Interstitial Model of DX Centers, Materials Science Forum, 38-41, (1989)
[8]
The enthalpy of formation of an antisite pair in GaAs is calculated to be about 0.7 eV: Van Vechten JA, J. Electrochem. Soc., 122, 3, (1975)
[9]
Morgan TN, J. Electron. Mater., 20, 1, (1991)
[10]
See Bourgoin JC, von Bardeleben HJ, Stievenard D, J. Appl. Phys., 64, 9, (1988)