DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS/ALGAAS LASERS UNDER HIGH-POWER OPERATION

被引:104
作者
FUKUDA, M
OKAYASU, M
TEMMYO, J
NAKANO, J
机构
[1] NTT Opto-Electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3–1, Morinosato Wakamiya
关键词
D O I
10.1109/3.283796
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The degradation behavior of 0.98-mum strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of the interface between the laser material (facet) and the antireflecting (AR) coating film. This phenomenon is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low optical output power in lasers without facet coating films. Throughout the clarification of those phenomena, the main reliability problem in 0.98-mum strained QW lasers under high output power operation is clarified.
引用
收藏
页码:471 / 476
页数:6
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