CROSSTIE-MEMORY

被引：18

作者：

SCHWEE, LJ ^{[1
]}

IRONS, HR ^{[1
]}

ANDERSON, WE ^{[1
]}

机构：

[1] USN,WHITE OAK LAB,CTR SURFACE WEAP,SILVER SPRING,MD 20910

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1976年 / 12卷 / 06期

关键词：

D O I：

10.1109/TMAG.1976.1059098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：608 / 613

页数：6

共 13 条

[1]

COLLETTE R, 1964, J APPL PHYS, V35, P3295

[2]

FELDTKELLER E, 1963, Z ANGEW PHYS, V15, P206

[3]

GANGULEE A, 1974, IEEE T MAGN, VMA10, P848, DOI 10.1109/TMAG.1974.1058410

[4] DOMAIN-WALL STRUCTURE IN PERMALLOY FILMS [J].

HUBER, EE ;

SMITH, DO ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (03) :294-295

[5]

JAN JP, 1963, SOLID STATE PHYSICS, V5, P15

[6] WALL PLACEMENT IN A CROSS-TIE MEMORY ELEMENT [J].

LO, DS ;

PAUL, MC .

IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (04) :1079-1081

[7]

MIDDELHOEK S, 1961, THESIS U AMSTERDAM

[8] PROPAGATION AND OBSERVATION OF DIGITAL INFORMATION STORED IN CROSSTIE MEMORY [J].

SCHWEE, LJ ;

IRONS, HR ;

ANDERSON, WE .

IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (03) :564-566

[9]

SCHWEE LJ, 1972, AIP C P, V10, P996

[10]

SCHWEE LJ, 1976, AIP C P

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