TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON

Using photoluminescence decay measurements the radiative lifetime of porous silicon is investigated between liquid helium and room temperature. The radiative recombination mechanism in porous silicon is in essence the same as in bulk silicon, viz. a phonon mediated indirect transition. The functional dependence of the lifetime on photon energy reveals the confinement character of the recombination carriers. The high external photoluminescence efficiency is well explained by the reduction of nonradiative recombination owing to low mobility, to low dimensionality, and to the extreme low surface recombination rate, and is further enhanced by the relatively small refractive index.