GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY

被引：26

作者：

PALMSTROM, CJ ^{[1
]}

VANDERGAAG, BP ^{[1
]}

SONG, JI ^{[1
]}

HONG, WP ^{[1
]}

SCHWARZ, SA ^{[1
]}

NOVAK, S ^{[1
]}

机构：

[1] EVANS EAST,PLAINSBORO,NJ 08356

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful growth of p- type (approximately 1 X 10(20) holes/cm-3) C-doped lattice matched GaInAs on InP(100) has been demonstrated using chemical beam epitaxy. Carbon tetrachloride was used as the C-dopant gas and p-type GaInAs was grown by chemical beam epitaxy using trimethylindium, triethylgallium and cracked arsine. Combinations of elemental and organometallic group-III sources also resulted in p-type layers. High performance C-doped base InP/InGaAs heterojunction bipolar transistors were fabricated using chemical beam epitaxy grown material.

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页码：3139 / 3141

页数：3

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