PREPARATION AND CHARACTERIZATION OF CU(IN1-XGAX)(3)SE-5 THIN-FILMS

Polycrystalline Cu(In1-xGax)(3)Se-5 thin films were prepared by four source evaporation with controlling and shielding of the molecular beams from elemental sources. Ga content x, can be controlled by deposition times of CuIn3Se5 and CuGa3Se5 layers, which form Cu(In1-xGax)(3)Se-5 films through the interdiffusion. X-ray diffraction analyses showed that the films with x less than or similar to 0.5 have an ordered vacancy chalcopyrite and the films with x greater than or similar to 0.5 have a zinc blende structure. The optical band gap of the films linearly increased from 1.23 eV (x=0) to 1.85 eV (x=1) with increasing Ga content. The conductivity of the films was about 10(-6)/Omega cm and about 10(-7)/Omega cm under and above x=0.3, respectively. (C) 1995 American Institute of Physics.