RANGE DISTRIBUTIONS IN BINARY TARGETS

被引：5

作者：

JIMENEZRODRIGUEZ, JJ ^{[1
]}

KARPUZOV, DS ^{[1
]}

ELLIMAN, RG ^{[1
]}

NOBES, MJ ^{[1
]}

KOSTIC, S ^{[1
]}

ARMOUR, DG ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

BISMUTH AND ALLOYS - Computer simulation;

D O I：

10.1016/0167-5087(83)90780-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Theoretical and computer simulation treatments have been used to study high-fluence depth-profile modification. In the preliminary investigations bismuth implantations into homogeneous and inhomogeneous arsenic-silicon mixtures and arsenic implantations into similar bismuth-silicon mixtures have been considered. The depth distributions of the implanted species were calculated using a theoretical treatment based on Lindhard's stopping criteria and a computer simulation based on the MARLOWE code. Good agreement was obtained for the ranges calculated using the two techniques.

引用

页码：43 / 47

页数：5

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