INSITU CONTROL OF GA(AL)AS MBE LAYERS BY PYROMETRIC INTERFEROMETRY

被引：787

作者：

GROTHE, H ^{[1
]}

BOEBEL, FG ^{[1
]}

机构：

[1] FRAUNHOFER INST INTEGRIERTE SCHALTUNGEN,W-8520 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90778-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pyrometric interferometry is used for the in-situ optical thickness control of Ga(Al)As MBE layers. Real time computer evaluation of the oscillations in temperature radiation from the heated substrate allows easy control of quarter wavelength layers for vertical cavity surface emitting laser diodes. Effects due to variation of the substrate surface temperature and reflection of radiation from hot evaporation cells are discussed as well as influences from optical phase shift or phase matching.

引用

页码：1010 / 1013

页数：4