PRESSURE-DEPENDENCE OF THE HOLE MOBILITY IN GAAS, INP AND (GAIN)(ASP)/INP

被引:9
作者
ADAMS, AR
SHANTHARAMA, LG
机构
来源
PHYSICA B & C | 1986年 / 139卷 / 1-3期
关键词
D O I
10.1016/0378-4363(86)90613-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:419 / 422
页数:4
相关论文
共 13 条
[1]   EFFECT OF PRESSURE ON HOLE EFFECTIVE MASSES IN GAAS [J].
ALEKSEEVA, ZM ;
VYATKIN, AP ;
KARAVAEV, GF ;
KRIVOROTOV, NP .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01) :321-326
[2]   CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].
CAMPHAUSEN, DL ;
CONNELL, GAN ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+
[3]  
GERLICH D, 1980, HIGH PRESSURE SCI TE, V1, P506
[4]  
HAYES JR, 1985, J ELECTRON MAT, V11, P155
[5]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&
[6]   ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH ;
FERRY, DK ;
HARRISON, JW .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114
[7]   ELASTIC MODULI OF GAAS AT MODERATE PRESSURES AND EVALUATION OF COMPRESSION TO 250 KBAR [J].
MCSKIMIN, HJ ;
JAYARAMA.A ;
ANDREATC.P .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2362-&
[8]   PRESSURE-DEPENDENCE OF BAND-STRUCTURE OF GAAS [J].
NEUMANN, H ;
TOPOL, I ;
SCHULZE, KR ;
HESS, E .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 56 (01) :K55-K57
[9]   TEMPERATURE AND PRESSURE DEPENDENCES OF THE DIELECTRIC-CONSTANTS OF SEMICONDUCTORS [J].
SAMARA, GA .
PHYSICAL REVIEW B, 1983, 27 (06) :3494-3505
[10]   THE INFLUENCE OF ALLOY DISORDER ON THE K.P INTERACTION IN (GAIN) (ASP)/INP [J].
SHANTHARAMA, LG ;
NICHOLAS, RJ ;
ADAMS, AR ;
SARKAR, CK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :L443-L448