BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS

被引:207
作者
MORGAN, TN
机构
来源
PHYSICAL REVIEW | 1965年 / 139卷 / 1A期
关键词
D O I
10.1103/PhysRev.139.A343
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:A343 / &
相关论文
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