THE INFLUENCE OF HYDROGEN GAS ON THE CHARACTERISTICS OF AMORPHOUS-SILICON DEPOSITED BY RF SPUTTERING

被引：9

作者：

LUE, JT ^{[1
]}

MEYER, O ^{[1
]}

LOMBAARD, J ^{[1
]}

WANG, RH ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1016/0038-1101(82)90025-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1011 / 1016

页数：6

共 13 条

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MOTT, NF .

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[7] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

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SPEAR, WE .

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[10] ELECTRONS IN DISORDERED STRUCTURES [J].

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