CHARACTERISTICS OF ION-IMPLANTATION DAMAGE AND ANNEALING PHENOMENA IN SEMICONDUCTORS

被引：86

作者：

NARAYAN, J

HOLLAND, OW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115377

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2651 / 2662

页数：12

共 21 条

[1]

BULLOUGH R, 1972, RAD INDUCED VOIDS ME, P769

[2]

CORBETT JW, 1975, POINT DEFECTS SOLIDS, P1

[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[4]

HOLLAND OW, 1984, APPL PHYS LETT, V44, P748

[5] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].

KINCHIN, GH ;

PEASE, RS .

REPORTS ON PROGRESS IN PHYSICS, 1955, 18 :1-51

[6] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

KOKOROWSKI, SA ;

OLSON, GL ;

HESS, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :921-926

[7]

Larson B. C., 1979, Neutron Transmutation Doping in Semiconductors, P281

[8] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

APPLETON, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :871-887

[9] SELF-CLIMB OF DISLOCATION LOOPS IN MAGNESIUM-OXIDE [J].

NARAYAN, J ;

WASHBURN, J .

PHILOSOPHICAL MAGAZINE, 1972, 26 (05) :1179-&

[10] FORMATION OF METASTABLE SUPERSATURATED SOLID-SOLUTIONS IN ION-IMPLANTED SILICON DURING SOLID-PHASE CRYSTALLIZATION [J].

NARAYAN, J ;

HOLLAND, OW .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :239-242

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