RECOMBINATION KINETICS AND ELECTROLUMINESCENCE FROM DEEP LEVELS IN CARRIER DIFFUSION REGION OF A P-N JUNCTION

被引：23

作者：

NELSON, DF

机构：

来源：

PHYSICAL REVIEW | 1966年 / 149卷 / 02期

关键词：

D O I：

10.1103/PhysRev.149.574

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：574 / &

共 8 条

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[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
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[3] HALL RN, 1951, PHYS REV, V83, P228
[4] DEPENDENCE OF RECOMBINATION RADIATION ON CURRENT IN CAAS DIODES
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BLACK, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1521 - &
[5] LUMINESCENCE AND RECOMBINATION THROUGH DEFECTS IN P-N JUNCTIONS
MORGAN, TN
[J]. PHYSICAL REVIEW, 1965, 139 (1A): : A294 - &
[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[8] KINETICS OF RADIATIVE RECOMBINATION AT RANDOMLY DISTRIBUTED DONORS AND ACCEPTORS
THOMAS, DG
HOPFIELD, JJ
AUGUSTYNIAK, WM
[J]. PHYSICAL REVIEW, 1965, 140 (1A): : A202 - +