VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：12

作者：

SAOUDI, R

HOLLINGER, G

GAGNAIRE, A

FERRET, P

PITAVAL, M

机构：

[1] ECOLE CENT LYON, ELECTR LAB, CNRS, URA 848, F-69131 ECULLY, FRANCE

[2] ECOLE CENT LYON, DEPT PHYSICOCHIM MAT, F-69131 ECULLY, FRANCE

[3] UNIV LYON 1, DEPT PHYS MAT, F-69622 VILLEURBANNE, FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 07期

关键词：

D O I：

10.1051/jp3:1993212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High Resolution cross-sectional Transmission Electron Microscopy (HRTEM), Spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) have been used conjointly to measure accurately the thickness of very thin SiO2 filMS (20-200 angstrom) of electronic quality. HRTEM has been used to calibrate both ellipsometry and XPS technics. A procedure to measure the absolute oxide film-thicknesses has been defined for each of the three methods.

引用

页码：1479 / 1488

页数：10

共 21 条

[1] STUDIES OF SURFACE, THIN-FILM AND INTERFACE PROPERTIES BY AUTOMATIC SPECTROSCOPIC ELLIPSOMETRY [J].