A 12 GHZ OSCILLATOR BASED ON A GAAS HEMT INTEGRATED TO A HTS RESONATOR

被引：8

作者：

BORGHS, G

DEBOECK, J

FRANCOIS, I

CHAMBONNET, D

BELOUET, C

CROSNIER, Y

CARRU, JC

CHAUVEL, D

ARNAUD, L

BOUCHER, H

VILLEGIER, JC

NICOLETTI, S

CORRERA, L

JIMENEZ, J

机构：

[1] ALCATE ALSTHOM RECH,MARCOUSSIS,FRANCE

[2] CEA TECHNOL AVANCEES,LETI,GRENOBLE,FRANCE

[3] DEPT FIS MAT CONDENSADA,VALLADOLID,SPAIN

[4] UNIV LILLE,LILLE,FRANCE

[5] CNR,INT LAMEL,I-40126 BOLOGNA,ITALY

来源：

JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C6期

关键词：

D O I：

10.1051/jp4:1994630

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a III-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 mOMEGA scaled to 12 GHz. The DC and RF characteristics of the pseudomorphic HEMT showed minor differences before and after hybridation. The characterisation of a preliminary prototype oscillator including a superconducting resonator patterned on a MgO substrate, a gold matching network fabricated on Al2O3 and a transistor wire bonded gave a phase noise as low as - 75 dBc/Hz at 10 KHz.

引用

页码：189 / 194

页数：6

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