POSITRON-ANNIHILATION IN SILICON-CRYSTALS WITH MECHANICALLY PROCESSED SURFACES

被引：7

作者：

AREFIEV, KP ^{[1
]}

KARETNIKOV, AS ^{[1
]}

VOROBIEV, SA ^{[1
]}

机构：

[1] TOMSK POLYTECH INST,NUCL PHYS RES INST,TOMSK,USSR

来源：

APPLIED PHYSICS | 1975年 / 8卷 / 03期

关键词：

D O I：

10.1007/BF00896622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：273 / 276

页数：4

共 14 条

[1]

Aref'ev K. P., 1971, Fizika Tverdogo Tela, V13, P922

[2]

AREFIEV KP, TO BE PUBLISHED

[3] 3-QUANTUM ANNIHILATION OF POSITRONS IN IONIC CRYSTALS [J].

BISI, A ;

BUSSOLATI, C ;

COVA, S ;

ZAPPA, L .

PHYSICAL REVIEW, 1966, 141 (01) :348-+

[4] EFFECT OF IMPURITIES OF ANGULAR CORRELATION OF POSITRON ANNIHILATION RADIATION [J].

DEZAFRA, RL .

PHYSICAL REVIEW, 1959, 113 (06) :1547-1555

[5] TEMPERATURE EFFECT ON POSITRON ANNIHILATION IN CONDENSED MATTER [J].

DEZAFRA, RL ;

JOYNER, WT .

PHYSICAL REVIEW, 1958, 112 (01) :19-29

[6] ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION [J].

ERSKINE, JC ;

MCGERVEY, JD .

PHYSICAL REVIEW, 1966, 151 (02) :615-&

[7]

FAINSTEIN SM, 1966, PROCESSING SURFACE S

[8] POSITRON ANNIHILATION IN SEMICONDUCTORS [J].

FIESCHI, R ;

GAINOTTI, A ;

GHEZZI, C ;

MANFREDI, M .

PHYSICAL REVIEW, 1968, 175 (02) :383-&

[9]

GOLDANSKY VI, 1968, PHYSICAL CHEMISTRY P

[10] 3-PHOTON ANNIHILATION OF AN ELECTRON-POSITRON PAIR [J].

ORE, A ;

POWELL, JL .

PHYSICAL REVIEW, 1949, 75 (11) :1696-1699

← 1 2 →