SELECTIVE EPITAXIAL-GROWTH OF GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：35

作者：

YAMAGUCHI, K ^{[1
]}

OKAMOTO, K ^{[1
]}

IMAI, T ^{[1
]}

机构：

[1] SHIZUOKA UNIV,DEPT ELECTR ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 12期

关键词：

D O I：

10.1143/JJAP.24.1666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1666 / 1671

页数：6

共 15 条

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[3]

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[5] SELECTED AREA GROWTH OF INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON ION-IMPLANTED INP SUBSTRATES [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (08) :771-773

[6] LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

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FAN, JCC ;

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[7] SELECTIVE AREA GROWTH OF GALLIUM-ARSENIDE BY METALORGANIC VAPOR-PHASE EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (11) :1229-1231

[8] STRUCTURE OF GAAS-GA1-XALXAS SUPER-LATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[9] RECOLLECTIONS AND REFLECTIONS OF MO-CVD [J].

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[10] SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY [J].

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