THEORETICAL SHAPE OF METAL-INSULATOR-METAL POTENTIAL BARRIERS

[1] PHOTOCONDUCTION IN ANODIC TA2O5 [J]. PHYSICAL REVIEW, 1952, 88 (01): : 58 - 59

[2] DEWALD JF, 1955, J ELECTROCHEM SOC, V102

[3] TUNNELING THROUGH THIN INSULATING LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 172 - &

[4] GEPPERT DV, 1960, P IRE, V48, P1644

[5] THE MECHANISM OF ELECTROLYTIC RECTIFICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1952, 99 (01) : 30 - 37

[6] OPERATION OF TUNNEL-EMISSION DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 646 - &

[7] Mott N. F., 1940, ELECTRONIC PROCESSES, P168

[8] ROSE A, 1955, PHYS REV, V97, P30

[9] P-I-N JUNCTION IN THE ANODIC OXIDE FILM OF TANTALUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) : 177 - 186

[10] HOT ELECTRONS IN METAL FILMS - INJECTION AND CCLLECTION [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (07) : 341 - &

[1] PHOTOCONDUCTION IN ANODIC TA2O5 [J]. PHYSICAL REVIEW, 1952, 88 (01): : 58 - 59

[2] DEWALD JF, 1955, J ELECTROCHEM SOC, V102

[3] TUNNELING THROUGH THIN INSULATING LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 172 - &

[4] GEPPERT DV, 1960, P IRE, V48, P1644

[5] THE MECHANISM OF ELECTROLYTIC RECTIFICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1952, 99 (01) : 30 - 37

[6] OPERATION OF TUNNEL-EMISSION DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 646 - &

[7] Mott N. F., 1940, ELECTRONIC PROCESSES, P168

[8] ROSE A, 1955, PHYS REV, V97, P30

[9] P-I-N JUNCTION IN THE ANODIC OXIDE FILM OF TANTALUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) : 177 - 186

[10] HOT ELECTRONS IN METAL FILMS - INJECTION AND CCLLECTION [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (07) : 341 - &