DIRECT MODULATION OF SEMICONDUCTOR-LASERS AT F GREATER-THAN 10 GHZ BY LOW-TEMPERATURE OPERATION

被引：25

作者：

LAU, KY ^{[1
]}

HARDER, C ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：273 / 275

页数：3

共 6 条

[1] HIGH-SPEED GAAIAS/GAAS P-I-N PHOTO-DIODE ON A SEMI-INSULATING GAAS SUBSTRATE [J].

BARCHAIM, N ;

LAU, KY ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :261-262

[2] BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATES [J].

BARCHAIM, N ;

KATZ, J ;

URY, I ;

YARIV, A .

ELECTRONICS LETTERS, 1981, 17 (03) :108-109

[3]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P174

[4] HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS [J].

FIGUEROA, L ;

SLAYMAN, CW ;

YEN, HW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1718-1727

[5] DIRECT AMPLITUDE-MODULATION OF SHORT-CAVITY GAAS-LASERS UP TO X-BAND FREQUENCIES [J].

LAU, KY ;

BARCHAIM, N ;

URY, I ;

HARDER, C ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :1-3

[6]

LAU KY, UNPUB SEMICONDUCTOR

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